INDUCED GATE NOISE IN MOSFETS REVISITED - THE SUBMICRON CASE

At high frequencies the gate admittance of the MOSFET contains a condu ctive component because of the capacitive coupling of the gate electro de to the channel. The thermal noise fluctuations, originating in the channel, induce a gale current outwards from the gate electrode. Based on a proved two-region model for the drain current noise of a sub-mic ron MOSFET, it is shown that the calculated gate-noise current increas es significantly, compared to that predicted by a classical model, val id for long channel devices. (C) 1997 Elsevier Science Ltd.