The effects of structural and oxygen site defects on the ferromagnetic
phase transition and magnetotransport in doped lanthanum manganite fi
lms have been examined. Oxygen defects were introduced through a vacuu
m annealing process while structural defects were introduced using ion
irradiation. The introduction of both defect types strongly suppresse
d the Curie temperature T-c while increasing the peak resistivity, act
ivation energy, and magnetoresistance ratio. For defect types leading
to similar reductions in T-c, structural defects lead to a broader tra
nsition regime and a smaller MRR than are found for oxygen defects. We
ll above T-c both defect types lead to nearly identical resistivity cu
rves. Structural defects are argued to primarily affect the carrier mo
bility, hence these data provide a clue that the carrier mobility is d
ominating the transport properties in this regime.