INPLANE SPIN REORIENTATION TRANSITION IN ULTRATHIN EPITAXIAL FE(001) FILMS

Citation
M. Brockmann et al., INPLANE SPIN REORIENTATION TRANSITION IN ULTRATHIN EPITAXIAL FE(001) FILMS, Journal of applied physics, 81(8), 1997, pp. 5047-5049
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
8
Year of publication
1997
Part
2B
Pages
5047 - 5049
Database
ISI
SICI code
0021-8979(1997)81:8<5047:ISRTIU>2.0.ZU;2-T
Abstract
We studied the growth and magnetic properties of ultrathin Fe(001) fil ms on Au(001) buffer layers grown by molecular-beam epitaxy on MgO(001 ) single crystals. Epitaxial growth could be achieved by use of a Cr s eed layer. Epitaxial quality and surface structure were verified in si tu by low-energy and reflection high-energy electron diffraction and s canning tunneling microscopy (STM). Magnetic anisotropy of Fe films in the range of 3-155 monolayers (ML) was determined by alternating grad ient magnetometry, superconducting quantum interference device, and ma gneto-optic Kerr effect. The spontaneous magnetization was always in t he film plane. Below a critical thickness of 7.3+/-0.7 ML we observe a rotation of the cubic easy axes by 45 degrees from the [100] to the [ 110] directions within the film plane. This spin reorientation transit ion is equivalent to a sign reversal of an effective fourth order anis otropy constant K-1(eff). In addition, a uniaxial in-plane anisotropy is observed, which may be attributed to the step structure of the samp les obtained from STM images. (C) 1997 American Institute of Physics.