CHARACTERIZATION OF FESE THIN-FILMS PREPARED ON GAAS SUBSTRATE BY SELENIZATION TECHNIQUE

FeSe thin films were prepared on GaAs(100) substrate by the selenizati on of Fe films using molecular-beam epitaxy. FeSe compound thin films were obtained at a substrate temperature above 380 degrees C. From the depth profiles of Fe and Se in the selenized film measured by Auger e lectron spectroscopy, it was confirmed that an FeSe layer with a const ant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se in the film was 1/3. It was different from the composition in Fe3Se4 or Fe7Se8, which is a stable bulk FeSe compound. From the measured M-H curve, it was found that the obtained FeSe film consisted of two phas es with different magnetic properties. (C) 1997 American Institute of Physics.