Y. Takemura et al., CHARACTERIZATION OF FESE THIN-FILMS PREPARED ON GAAS SUBSTRATE BY SELENIZATION TECHNIQUE, Journal of applied physics, 81(8), 1997, pp. 5177-5179
FeSe thin films were prepared on GaAs(100) substrate by the selenizati
on of Fe films using molecular-beam epitaxy. FeSe compound thin films
were obtained at a substrate temperature above 380 degrees C. From the
depth profiles of Fe and Se in the selenized film measured by Auger e
lectron spectroscopy, it was confirmed that an FeSe layer with a const
ant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se
in the film was 1/3. It was different from the composition in Fe3Se4
or Fe7Se8, which is a stable bulk FeSe compound. From the measured M-H
curve, it was found that the obtained FeSe film consisted of two phas
es with different magnetic properties. (C) 1997 American Institute of
Physics.