ELECTRICAL-RESISTIVITY BEHAVIOR OF FE CR MULTILAYERS DEPOSITED BY DIFFERENT TECHNIQUES (MOLECULAR-BEAM EPITAXY, SPUTTERING), ON DIFFERENT SUBSTRATES (MGO,SI)/

High-resolution electrical resistivity measurements (rho,d rho/dT) wer e performed in three series of [Fe30 AngstromCrt Angstrom] multilayers in the temperature range 15-300 K, both at zero and under saturation magnetic field. The different series were prepared by MBE on MgO (100) substrates, by sputtering on MgO (100) substrates, and by sputtering on Si (100) substrates. In the temperature range 15 K less than or sim ilar to T < 50 K we always observe rho = beta T-3 where beta is a samp le-dependent constant, indicating the dominance of phonon-assisted int erband (s-d) electron scattering (rho proportional to T-3 when T much less than theta(Debye)) For the samples grown on MgO we observe that b eta decreases with t(Cr) whereas for the samples grown on Si, the coef ficient beta increases with t. For T > 150 K the resistivity attains t he classical dependence with rho proportional to T also predicted by t his s-d model. In spite of these differences our results show that rho = beta f(T) where f(T) is the same function of temperature for all th e different samples studied. (C) 1997 American Institute of Physics.