POSITION OF ANTIMONY IMPURITY ATOMS IN A PBTE LATTICE, DETERMINED BY EMISSION MOSSBAUER-SPECTROSCOPY

Citation
Vf. Masterov et al., POSITION OF ANTIMONY IMPURITY ATOMS IN A PBTE LATTICE, DETERMINED BY EMISSION MOSSBAUER-SPECTROSCOPY, Semiconductors, 31(11), 1997, pp. 1138-1139
Citations number
5
Journal title
ISSN journal
10637826
Volume
31
Issue
11
Year of publication
1997
Pages
1138 - 1139
Database
ISI
SICI code
1063-7826(1997)31:11<1138:POAIAI>2.0.ZU;2-L
Abstract
It is shown by emission Mossbauer spectroscopy on Sb-119(Sn-119m) that the localization of antimony impurity atoms in a PbTe lattice depends on the conductivity type of the material: Antimony is localized predo minantly in the anionic sublattice in electronic samples and in the ca tionic sublattice in hole samples. It is noted that the charge state o f an antistructural defect Sn-119m formed in the anionic sublattice of PbTe after Sb-119 undergoes nuclear decay does not depend on the posi tion of the Fermi level. (C) 1997 American Institute of Physics. [S106 3-7826(97)00911-3].