CURRENT TUNING OF THE EMISSION WAVELENGTH OF LOW-THRESHOLD MESA STRIPE LASERS UTILIZING INASSB INASSBP DOUBLE HETEROSTRUCTURES AND EMITTINGIN THE VICINITY OF 3.3-MU-M/

Diode lasers based on InAsSb/InAsSbP double heterostructures with a lo w threshold current (similar to 12 mA) and a narrow mesa stripe (of wi dth similar to 10 mu m) are investigated over a wide range of currents up to five times the threshold current. The modes of such lasers in t he measured current range are observed to shift toward shorter wavelen gths by approximately the amount of the spacing between modes as a res ult of an increase in the density of nonequilibrium carriers in the ac tive zone. The rate at which the modes shift with the current differs in different current intervals, depending on the degree of single-mode dominance of the laser emission spectrum. (C) 1997 American Institute of Physics. [S1063-7826(97)02911-6].