INFLUENCE OF VALENCE-BAND ABSORPTION ON THE THRESHOLD CHARACTERISTICSOF LONG-WAVELENGTH INAS LASERS

Authors
GUNKO NA ZEGRYA GG ZOTOVA NV SOKOLOVA ZN STUS NM KHALFIN VB
Citation
Na. Gunko et al., INFLUENCE OF VALENCE-BAND ABSORPTION ON THE THRESHOLD CHARACTERISTICSOF LONG-WAVELENGTH INAS LASERS, Semiconductors, 31(11), 1997, pp. 1204-1211
Citations number
16
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
11
Year of publication
1997
Pages
1204 - 1211
Database
ISI
SICI code
1063-7826(1997)31:11<1204:IOVAOT>2.0.ZU;2-X
Abstract
The mechanism of intraband absorption of radiation with hole transitio n into the spin-orbit split-off band, or so-called intervalence-band a bsorption (IVA), is subjected to microscopic analysis. It is shown tha t this IVA mechanism significantly influences the threshold characteri stics and quantum efficiency of InAs-based heterolasers. The dependenc es of the laser threshold characteristics on the temperature and the p arameters of the laser heterostructure are analyzed in detail, taking into account the new (IVA) channel of intraband absorption by holes. ( C) 1997 American Institute of Physics. [S1063-7826(97)03011-1].