A comparative XPS investigation of the formation of thin layers of tra
nsition metals on graphite (HOPG) was carried out. Deposition was perf
ormed by ion sputtering a clean metallic target in the preparation cha
mber of the spectrometer. The chemical characterization of the interfa
ce and the investigation of the growth mechanisms were carried out by
examining the binding energies (BE), the full widths at half maximum (
FWHM) and the intensities (I) of the XPS core-level spectra of the dep
osited metals and of the substrate as a function of deposition lime. A
BE shift of +0.6 eV accompanied by a FWHM increase of about 0.6 eV of
the metallic core-level is observed for the smallest amount of deposi
ted metal for the three metals, The layer thickness at which the BE an
d FWHM of the deposited metals reach the values of the bulk increases
in the order of Cu (8 Angstrom)<Ni (12 Angstrom)<Pt (25 Angstrom), The
XPS results show that Ni clusters are formed, whereas for Cu the data
suggest a layer-by-layer growth. The satellite of the Ni 2p(3/2) leve
l is found to be sensitive to the cluster size. The results for Pt ind
icate an interfacial reaction with a small charge transfer from Pt to
C, and the formation of islands. (C) 1997 Elsevier Science B.V.