STRUCTURAL AND ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE-GROWN AL(AS,SB)

Authors
BLANK H KROEMER H MATHIS S SPECK JS
Citation
H. Blank et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE-GROWN AL(AS,SB), Applied physics letters, 71(24), 1997, pp. 3534-3536
Citations number
6
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
24
Year of publication
1997
Pages
3534 - 3536
Database
ISI
SICI code
0003-6951(1997)71:24<3534:SAEOLA>2.0.ZU;2-S
Abstract
We have investigated structural and electrical properties of Al(As,Sb) dual-anion compounds grown by molecular beam epitaxy at low substrate temperature. We find single-crystal growth down to substrate temperat ures as low as 275 degrees C. Additional donor-type defects form when Al(As,Sb) is grown at 450 degrees C or less, with the defect density i ncreasing with decreasing substrate temperature. We find no evidence f or the formation of precipitates upon annealing low-temperature-grown (LTG) Al(As,Sb) in contrast to LTG arsenides. (C) 1997 American Instit ute of Physics. [S0003-6951(97)01950-5].