EPITAXIAL-GROWTH OF AND SILICIDE FORMATION IN FE FESI MULTILAYERS/

Citation
J. Dekoster et al., EPITAXIAL-GROWTH OF AND SILICIDE FORMATION IN FE FESI MULTILAYERS/, Journal of applied physics, 81(8), 1997, pp. 5349-5351
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
8
Year of publication
1997
Part
2B
Pages
5349 - 5351
Database
ISI
SICI code
0021-8979(1997)81:8<5349:EOASFI>2.0.ZU;2-P
Abstract
The structural properties of multilayers consisting of Fe layers separ ated by Si or FeSi layers grown with molecular beam epitaxy on MgO(001 ) and Si(lll) are reported. Rutherford backscattering and ion channeli ng are used to determine the crystallinity of the layers. We find evid ence for epitaxy, alloying effects, and structural coherence. Conversi on electron Mossbauer spectroscopy is utilized to investigate the sili cide formation in the spacer layer of Fe/FeSi multilayers and at the i nterface of Fe/Si layers. The silicide formed in Fe/FeSi multilayers i s characterized by a broad single line Mossbauer resonance which is ch aracteristic for the metastable CsCl-FeSi phase. For Fe/Si multilayers the Mossbauer results indicate that FeSi compounds with clearly other hyperfine parameters than the CsCl phase are formed in the spacer. (C ) 1997 American Institute of Physics.