EFFECTS OF SAMPLE-SIZE AND FIELD ORIENTATION ON PSEUDO-HALL VOLTAGE IN MICRONSCALE NICKEL THIN-FILM SQUARES

Citation
Yq. Jia et al., EFFECTS OF SAMPLE-SIZE AND FIELD ORIENTATION ON PSEUDO-HALL VOLTAGE IN MICRONSCALE NICKEL THIN-FILM SQUARES, Journal of applied physics, 81(8), 1997, pp. 5475-5477
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
8
Year of publication
1997
Part
2B
Pages
5475 - 5477
Database
ISI
SICI code
0021-8979(1997)81:8<5475:EOSAFO>2.0.ZU;2-0
Abstract
Pseudo-Hall effect (PHE) in Ni thin-him squares of 1-5 mu m size is me asured with a constant current through two leads along one diagonal of the square and the voltage output from leads along the other diagonal . The PHE voltage in response to an in-plane magnetic field depends on the square size and field orientation. The minimum PHE voltage at low field is close to zero only with the 2 mu m square containing four sy mmetrical closure domains leading to a 600% relative change in PHE vol tage. The PHE signal is found the largest when the field direction is along the square side while the smallest when along the square diagona l. (C) 1997 American Institute of Physics.