PROCESS SIMULATION FOR THE 1990S

Citation
H. Stippel et al., PROCESS SIMULATION FOR THE 1990S, Microelectronics, 26(2-3), 1995, pp. 203-215
Citations number
64
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00262692
Volume
26
Issue
2-3
Year of publication
1995
Pages
203 - 215
Database
ISI
SICI code
0026-2692(1995)26:2-3<203:PSFT1>2.0.ZU;2-0
Abstract
In this paper, an outlook on future aspects of process simulation is g iven. The main direction for ongoing research is simulation in three s pace dimensions. For modern devices, all three spatial coordinates mus t be obeyed in process simulation, to provide sufficiently accurate do ping profiles and device geometry for three-dimensional device simulat ion and, therefore, to predict the electric behaviour of the device re alistically. Some new techniques to circumvent current limitations in three-dimensional process simulations are depicted. Aspects of process now representation for future automatic process optimization are disc ussed.