MODELING HIGH-CONCENTRATION BORON-DIFFUSION WITH DYNAMIC CLUSTERING -INFLUENCE OF THE INITIAL CONDITIONS

Boron diffusion and activation at high concentrations are key problems in the formation of shallow P+ junctions. Therefore, it is necessary to understand and to predict accurately the dopant behaviour under the se conditions. In this paper, the modelling of boron is discussed, by the use of a non-equilibrium point-defect model, including amorphizati on and a dynamic clustering component. The initial conditions are of m ajor importance, not only for the transient enhanced diffusion, but al so for the amount of active dopants. As a result, it is possible to ob tain activation levels greater than the solid solubility, as observed experimentally.