ATOMISTIC EVALUATION OF DIFFUSION THEORIES FOR THE DIFFUSION OF DOPANTS IN VACANCY GRADIENTS

Citation
S. List et al., ATOMISTIC EVALUATION OF DIFFUSION THEORIES FOR THE DIFFUSION OF DOPANTS IN VACANCY GRADIENTS, Microelectronics, 26(2-3), 1995, pp. 261-264
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00262692
Volume
26
Issue
2-3
Year of publication
1995
Pages
261 - 264
Database
ISI
SICI code
0026-2692(1995)26:2-3<261:AEODTF>2.0.ZU;2-O
Abstract
A new approach is used for the calculation of transport coefficients f or dopants and vacancies from atomic jump frequencies in the presence of dopant or vacancy gradients. Results are shown for diffusion under vacancy gradients with an attractive potential between the dopant and the defect. It is demonstrated that for a given vacancy gradient not o nly the absolute value but also the sign of the dopant flux depends on the range of the binding potential.