WAVELENGTH DEPENDENCE OF AVALANCHE PHOTODIODE (APD) PARAMETERS

Authors
KIRN T SCHMITZ D SCHWENKE J FLUGEL T RENKER D WIRTZ HP
Citation
T. Kirn et al., WAVELENGTH DEPENDENCE OF AVALANCHE PHOTODIODE (APD) PARAMETERS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 387(1-2), 1997, pp. 202-204
Citations number
1
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
387
Issue
1-2
Year of publication
1997
Pages
202 - 204
Database
ISI
SICI code
0168-9002(1997)387:1-2<202:WDOAP(>2.0.ZU;2-G
Abstract
New types of Hamamatsu avalanche photodiodes (APD) have been investiga ted for the readout of PbWO4 crystals. The results presented cover qua ntum efficiency measurements of APD prototype A-E, which is passivated by a SiO2 layer or a Si3N4 layer, before and after exposure to a 5.5 Mrad dose of Co-60 photons. The measurements of the gain and of the ex cess noise factor as a function of the wavelength are also presented a nd compared to analytic calculations based on a simple model for the i nternal APD structure. This work was performed within the frame of the CMS ECAL group.