N. Bacchetta et al., MRS DETECTORS WITH HIGH-GAIN FOR REGISTRATION OF WEAK VISIBLE AND UV-LIGHT FLUXES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 387(1-2), 1997, pp. 225-230
Operation of silicon avalanche detectors based on a Metal-Resistive la
yer-Semiconductor (MRS) structure is presented, Results refer to a new
batch of detectors fabricated on a n-type substrate especially made t
o be used as light detecting elements of a scintillating fiber detecto
r for high energy physics applications. These detectors are meant for
weak light fluxes in the range 200-600 nm (called UV MRS). Measurement
s of gain, noise and quantum efficiency were performed and operation o
f the detector at different temperatures was also studied.