AMORPHOUS-SILICON THIN-FILM AS TUNABLE AND HIGH-SENSITIVE PHOTODETECTOR IN THE UV AND FAR UV SPECTRAL RANGE

Authors
DECESARE G IRRERA F PALMA F NASCETTI A NALETTO G NICOLOSI P PACE E
Citation
G. Decesare et al., AMORPHOUS-SILICON THIN-FILM AS TUNABLE AND HIGH-SENSITIVE PHOTODETECTOR IN THE UV AND FAR UV SPECTRAL RANGE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 387(1-2), 1997, pp. 243-245
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
387
Issue
1-2
Year of publication
1997
Pages
243 - 245
Database
ISI
SICI code
0168-9002(1997)387:1-2<243:ATATAH>2.0.ZU;2-6
Abstract
We describe an innovative family of photodiodes based on a-Si:H/a-SiC: H p-i-n junction grown by Glow Discharge. The aim of this technology i s to realize two-dimensional detector arrays on cheap substrates such as glass or flexible materials. Their spectral response can be tuned d uring the growing process to have high sensitivity in the ultraviolet and vacuum ultraviolet ranges, selecting the absorption profile in the semiconductor and the film thickness. We have performed a set of meas urements at room temperature to characterize the visible and UV respon se of a first generation prototype, having a sensitive area of 0.17 cm (2), and an improved second generation optimized for UV photon detecti on.