ELECTROOPTICAL PROPERTIES OF DIAMOND THIN-FILMS AS UV PHOTODETECTORS

Authors
PACE E GALLUZZI F ROSSI MC SALVATORI S MARINELLI M PAROLI P
Citation
E. Pace et al., ELECTROOPTICAL PROPERTIES OF DIAMOND THIN-FILMS AS UV PHOTODETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 387(1-2), 1997, pp. 255-258
Citations number
10
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
387
Issue
1-2
Year of publication
1997
Pages
255 - 258
Database
ISI
SICI code
0168-9002(1997)387:1-2<255:EPODTA>2.0.ZU;2-8
Abstract
Optoelectronic properties of CVD-diamond thin films grown on silicon h ave been investigated in order to study the applications of diamond as active material for UV and soft X-ray photodetectors. A comparison of electrical and photoelectrical properties between diamond films grown by hot filament and microwave plasma enhanced CVD techniques is repor ted, discussing the role of the film morphology and the device geometr y.