LIFETIME CALCULATIONS OF MOSFETS USING DEPTH-DEPENDENT NONLOCAL IMPACT IONIZATION

Authors
VANDORT MJ SLOTBOOM JW STREUTKER G WOERLEE PH
Citation
Mj. Vandort et al., LIFETIME CALCULATIONS OF MOSFETS USING DEPTH-DEPENDENT NONLOCAL IMPACT IONIZATION, Microelectronics, 26(2-3), 1995, pp. 301-305
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics → ACNP
ISSN journal
00262692
Volume
26
Issue
2-3
Year of publication
1995
Pages
301 - 305
Database
ISI
SICI code
0026-2692(1995)26:2-3<301:LCOMUD>2.0.ZU;2-E
Abstract
In this paper, we present a simple but accurate engineering tool for o ptimizing the lifetime of MOSFETs against hot carrier degradation. The method consists of simulation of the substrate currents in conjunctio n with the use of an empirical relation between the transistor lifetim e and the MOSFET currents. Accurate calculations of the substrate curr ents are only possible if depth-dependent impact ionization is used in combination with the energy-balance equation.