Monte Carlo simulations of charging and profile evolution during plasm
a etching reveal that the substrate can mediate current imbalance acro
ss the wafer. This function couples patterned areas, where the electro
n shading effect dominates, to substrate areas directly exposed to the
plasma. When a net positive current flows through the pattern feature
s to the substrate, increasing the exposed area decreases the substrat
e potential, thereby causing notching at the connected feature sidewal
ls to worsen, in agreement with experimental observations.