9 INCH DIAGONAL ZNS AND ZNS-MN FILMS FABRICATED BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION

This article examines the feasibility of fabricating polycrystalline Z nS and ZnS:Mn films with a size of 9 in. diagonal (190 mm x 130 mm) fo r use in thin film electroluminescent display via low pressure metallo rganic chemical vapor deposition. The uniformities of film thickness a nd crystallinity are studied as functions of H-2 flow rate, the slit w idth of inlet nozzles, and the manganese concentration. Uniform polycr ystalline ZnS and ZnS:Mn films are also obtained. Film thickness Varia nce is controlled below +/-3%. Less than +/-5% variation in x-ray full width at half maximum is obtained in the ZnS film as well. The atomic ratio of S/Zn is close to unity value, as estimated by the measuremen t of electron probe microanalyzer. In addition, the distribution of ma nganese dopant concentration in ZnS:Mn films is also uniform. The unif orm counts of Zn, S, and Mn atoms persist throughout the ZnS:Mn films, as demonstrated by the secondary ion mass spectrometry. Moreover, ato mic force microscopy image root-mean-square roughness of film's surfac e is measured to be 93 Angstrom.