ON-CHIP DECOUPLING CAPACITANCE WITH HIGH DIELECTRIC-CONSTANT AND STRENGTH USING SRTIO3 THIN-FILMS ELECTRON-CYCLOTRON-RESONANCE-SPUTTERED AT400-DEGREES-C

It is shown that SrTiO3 thin (100 nm) film electron-cyclotron-resonanc e-sputtered at 400 degrees C has a good time dependent dielectric brea kdown (TDDB) characteristic, a high dielectric constant, and high diel ectric strength. Extrapolation of TDDB data suggests that the lifetime of the films can be estimated to be 10 years at an electric field of 2 MV/cm. These electrical properties and process parameters imply the possibility of dielectrics of on-chip decoupling capacitors. The depos ition and annealing temperatures (both 400 degrees C) of this film sat isfy the temperature requirement of aluminum interconnect processing i n the fabrication of standard complementary metal oxide silicon large- scale integrated circuits.