H. Takeno et al., PRACTICAL COMPUTER-SIMULATION TECHNIQUE TO PREDICT OXYGEN PRECIPITATION BEHAVIOR IN CZOCHRALSKI SILICON-WAFERS FOR VARIOUS THERMAL-PROCESSES, Journal of the Electrochemical Society, 144(12), 1997, pp. 4340-4345
A practical computer simulation technique has been developed to predic
t oxygen precipitation behavior in Czochralski silicon wafers during v
arious thermal processes. In this simulation, an empirical factor is i
ntroduced in the initial and boundary conditions of the Fokker-Planck
equation of the oxygen precipitation in order to make up an incomplete
assumption of a homogeneous nucleation process proposed bg Schrems et
al.(1) The empirical factor is constructed as a function of heat-trea
tment temperature and interstitial oxygen concentration so as to descr
ibe characteristic phenomena of the precipitation nucleation processes
in the 450 to 800 degrees C range. Futhermore, an experimentally meas
ured thermal history during a crystal growth process, which strongly i
nfluence the oxygen precipitation behavior in the subsequent thermal p
rocess, has been taken into consideration. The calculated results agre
e fairly well with the experimental results for a variety of thermal p
rocesses. This semi-empirical simulation technique thus provides an ad
vantageous tool for industrial optimization of the oxygen precipitatio
n characteristics.