IN-DOPED CDS0.9SE0.1 PHOTOELECTRODE FOR ELECTROCHEMICAL SOLAR-CELL APPLICATIONS

An electrochemical photovoltaic cell has been fabricated out of the in dium doped CdS0.9Se0.1 as the photoelectrode, sulphide / polysulphide as an electrolyte and impregnated carbon as a counter electrode. The d oping range of indium concentration is from 0.01 to 1 mol A. The main properties studied are the dynamic I-V and C-V characteristics in dark , photovoltaic power output curves under 40 mW/cm(2), and the photores ponse and the measurements of the built-in-potential. The performance parameters, viz, n(d), V-fb, Phi(B), V-oc, I-sc, eta%, FF%, R-s%, R-sh , n(L) etc, that determine the nature of the junction formed and there fore the quality of the cell, have been evaluated. The effect of In-do ping concentration on them has been presented.