INFRARED STUDY OF SPUTTERED HYDROGENATED AMORPHOUS-SILICON FILMS WITHUNINTENTIONALLY INCORPORATED OXYGEN AND NITROGEN

Authors
TALUKDER G SOBHAN MA HASHEM A TALUKDER MR CORNISH JCL JENNINGS P HEFTER GT CLARE BW
Citation
G. Talukder et al., INFRARED STUDY OF SPUTTERED HYDROGENATED AMORPHOUS-SILICON FILMS WITHUNINTENTIONALLY INCORPORATED OXYGEN AND NITROGEN, Indian Journal of Pure & Applied Physics, 35(9), 1997, pp. 574-578
Citations number
14
Categorie Soggetti
Physics
Journal title
Indian Journal of Pure & Applied Physics → ACNP
ISSN journal
00195596
Volume
35
Issue
9
Year of publication
1997
Pages
574 - 578
Database
ISI
SICI code
0019-5596(1997)35:9<574:ISOSHA>2.0.ZU;2-N
Abstract
Reactively sputtered hydrogenated amorphous silicon films with signifi cant amount of unintentionally incorporated oxygen and nitrogen have b een studied through quantitative analysis of infrared absorption spect ra. The results indicate that the incorporation of oxygen and nitrogen atoms enhance the integrated strengths of 845 and 2090 cm(-1) modes r espectively, Further the peak position of the 1020 cm(-1) mode moves l inearly towards higher wave numbers with increasing number of bridging oxygen atoms attached to six bonding positions of the two silicon ato ms of the Si-O-Si group.