Borides of aluminum and silicon have previously shown superior resista
nce to oxidation at high temperature and other useful properties. In t
his paper, carbon substrates were coated using chemical vapor depositi
on (CVD) from the Al-B-Si-H-Cl-Ar system in a cold-wall reactor. B-Si
compounds such as SiB4+/-x and SiB6 were deposited as thick coatings b
y varying the B/Si molar ratio in the gas phase and the deposition tem
perature. A transition from nodular to faceted grain growth was observ
ed between 1150 degrees C and 1250 degrees C. Al-B coatings were also
deposited, but consisted of a boron-rich phase with faceted grains irr
espective of the B/Al ratios or deposition temperatures used in this i
nvestigation. Although aluminum acted as a growth modifier to improve
the quality and increase the size of grains, Al-B and B-Si compounds c
ould not be deposited simultaneously from the gas phase and no ternary
compounds from the Al-B-Si system were observed. (C) 1997 Elsevier Sc
ience S.A.