SUPERIOR STRESS-MIGRATION RESISTANCE OF HIGHLY TEXTURED AL[111] FILMSFOR SURFACE-ACOUSTIC-WAVE DEVICE ELECTRODES

Authors
KAMIJO A MATSUKURA N
Citation
A. Kamijo et N. Matsukura, SUPERIOR STRESS-MIGRATION RESISTANCE OF HIGHLY TEXTURED AL[111] FILMSFOR SURFACE-ACOUSTIC-WAVE DEVICE ELECTRODES, NEC research & development, 38(4), 1997, pp. 385-393
Citations number
21
Journal title
NEC research & development → ACNP
ISSN journal
0547051X
Volume
38
Issue
4
Year of publication
1997
Pages
385 - 393
Database
ISI
SICI code
0547-051X(1997)38:4<385:SSROHT>2.0.ZU;2-2
Abstract
Highly textured Al[111] films have been grown on an ultrathin metal un derlayer approximate to 1 nm thick by Ion-Beam Sputtering (IBS). Surfa ce Acoustic Wave (SAW) devices with these highly textured Al[111] elec trodes were fabricated and their resistance to Stress-Migration (SM) w as investigated. They exhibited superior SM resistance; their lifetime s were more than 3,000 times as long as those with evaporated polycrys talline Al electrodes.