HIGH-EFFICIENCY SILICON POWER MOSFETS FOR DCS1800 PCS1900 AND GSM CELLULAR PHONES/

High efficiency N-channel silicon power MOSFETs have been developed fo r battery operated 900 MHz/1.9 GHz cellular handsets. The ''NEWMOS'' i s newly developed NEC's 0.6 mu m WSi gate lateral MOSFET technology, a nd developed chips are housed in a surface mount SOT-89 style package. The MOSFET for GSM (Global System for Mobile Communications) final ou tput stage amplifier can deliver 35.5 dBm output power with 60% PAE (P ower Added Efficiency) at 900 MHz, the MOSFET for DCS1800 (Digital Com munication System 1800)/PCS1900 (Personal Communication Systems 1900) final output stage amplifier can deliver 33.0 dBm output power with 50 % PAE at 1.9 GHz and the driver amplifier chip has 13 dB linear gain a t 1.9 GHz under the 4.8 V supply voltage.