SULFUR-MODIFIED SURFACE OF INP(001) - EVIDENCE FOR SULFUR INCORPORATION AND SURFACE OXIDATION

Citation
T. Chasse et al., SULFUR-MODIFIED SURFACE OF INP(001) - EVIDENCE FOR SULFUR INCORPORATION AND SURFACE OXIDATION, Applied physics A: Materials science & processing, 65(6), 1997, pp. 543-549
Citations number
22
ISSN journal
09478396
Volume
65
Issue
6
Year of publication
1997
Pages
543 - 549
Database
ISI
SICI code
0947-8396(1997)65:6<543:SSOI-E>2.0.ZU;2-M
Abstract
A photoemission study was performed in order to obtain structural and chemical information on a sulfurized InP(001) surface by using both hi gh-resolution SXPS/XPS and polar angle scanned photoelectron diffracti on (XPD). Theoretical simulations of the angular distribution curves ( ADCs) were carried out on the level of single scattering cluster calcu lations. The ADCs of the S 2p core level of sulfur on InP(001) clearly indicate partial incorporation of the sulfur onto phosphorus lattice sites of the bulk InP structure. Persistence of sulfidic S species aga inst UV/ozone exposure also suggests subsurface sulfur on InP(001). Th e sulfur-passivation may significantly reduce the amount of surface ox idation but cannot suppress it completely.