OBSERVATIONS AND MEASUREMENTS ON A MULTILEVEL METALLIZATION SYSTEM USING BACKFLOW EFFECT

Authors
JI Y LI ZG ZHANG W SUN YH CHENG YH GUO WL
Citation
Y. Ji et al., OBSERVATIONS AND MEASUREMENTS ON A MULTILEVEL METALLIZATION SYSTEM USING BACKFLOW EFFECT, Journal of trace and microprobe techniques, 15(4), 1997, pp. 485-488
Citations number
1
Journal title
Journal of trace and microprobe techniques → ACNP
ISSN journal
07334680
Volume
15
Issue
4
Year of publication
1997
Pages
485 - 488
Database
ISI
SICI code
0733-4680(1997)15:4<485:OAMOAM>2.0.ZU;2-X
Abstract
The SEM-EDX analysis and the electrical measurements indicate that a m ass backflow is formed in a novel multilevel metallization system. The electromigration reliability of ohmic contacts for VLSI interconnecti ons has been improved and the lifetimes of metallization films of micr oelectronic devices has been increased.