STRUCTURAL CHARACTERIZATION OF BETA-FESI2 FILMS ON SI(100) PREPARED BY REACTIVE DEPOSITION SOLID-PHASE EPITAXY

Authors
NI RS WANG LW SHEN QW LIN CG
Citation
Rs. Ni et al., STRUCTURAL CHARACTERIZATION OF BETA-FESI2 FILMS ON SI(100) PREPARED BY REACTIVE DEPOSITION SOLID-PHASE EPITAXY, Journal of trace and microprobe techniques, 15(4), 1997, pp. 541-545
Citations number
5
Journal title
Journal of trace and microprobe techniques → ACNP
ISSN journal
07334680
Volume
15
Issue
4
Year of publication
1997
Pages
541 - 545
Database
ISI
SICI code
0733-4680(1997)15:4<541:SCOBFO>2.0.ZU;2-R
Abstract
Semiconducting beta-FeSi2 films have been synthesized by reactive depo sition solid phase epitaxy. X-ray diffraction, Rutherford backscatteri ng spectroscopy and channeling, and transmission electron microscopy h ave been used to determine the microstructure. Different growth condit ions have been compared.