In semiconducting materials for lasers and light emitting diodes the r
adiative recombination processes are of a great importance. The effici
ency of these processes strongly depends on the presence of structure
defects which have usually nonuniform distribution and cause inhomogen
eities of radiation features of the material. The cathodoluminescence
scanning microscopy or cathodoluminescence mode of scanning electron m
icroscope enables us to control the luminescence properties of solids
on microscale level. It is very important to know possibilities and in
formation capacity of this method.