SILICON-CARBIDE NANOPARTICLES FOR ADVANCED MATERIALS PRODUCED IN RADIO-FREQUENCY MODULATED GLOW-DISCHARGES

Citation
G. Viera et al., SILICON-CARBIDE NANOPARTICLES FOR ADVANCED MATERIALS PRODUCED IN RADIO-FREQUENCY MODULATED GLOW-DISCHARGES, Vacuum, 48(7-9), 1997, pp. 665-668
Citations number
17
Categorie Soggetti
Physics, Applied","Material Science
Journal title
VacuumACNP
ISSN journal
0042207X
Volume
48
Issue
7-9
Year of publication
1997
Pages
665 - 668
Database
ISI
SICI code
0042-207X(1997)48:7-9<665:SNFAMP>2.0.ZU;2-6
Abstract
Nanometric powder of silicon carbide has been produced in a radiofrequ ency square wave-modulated glow discharge of SiH4 and CH4 gases. The t ransient behavior observed in the power absorbed during the discharge has been related to the various steps of the formation of particles. A t the transmission electron microscope, two populations of particles w ere found: around 70 and 300 nm. Electron diffraction patterns showed that the particles were amorphous although the short-range order was s imilar to that of beta-SiC micrometric powder. The atomic concentratio ns of Si, C and H were determined by elemental analysis. The chemical composition was determined by X-ray photoelectron spectroscopy. The po lymeric character of the powder was evident from the presence of CH, a nd CH, species as indicated by RAMAN and FTIR spectroscopies. (C) 1997 Elsevier Science Ltd. All rights reserved.