SIO2 FILM GROWTH AT ROOM-TEMPERATURE BY PLASMA-ENHANCED EVAPORATION IN AN UHV CHAMBER

Thin SiO2 films were deposited on Si (100) substrates by burning an el ectron are in argon/oxygen atmosphere and by simultaneous evaporation of silicon (plasma enhanced evaporation) at room temperature in an ult ra high vacuum chamber that was developed and optimized for this proce ss. The stoichiometric and optical properties of the films were invest igated by Auger electron spectroscopy (AES) and ellipsometry, and agre e well with SiO2 films of industrial standard. Electrical measurements on MOS structures show that the shift of the flatband voltage indicat es negative charges within the SiO2 layers. This room temperature grow th is promising for future nanoelectronic devices. (C) 1997 Elsevier S cience Ltd.