CARBON NITRIDE THIN-FILMS FORMATION BY N-2(-IMPLANTATION() ION)

Low energy (1-5keV) N-2(+) ion irradiation of graphite and diamond sur faces has been investigated by angle resolved X-ray photoelectron spec troscopy (ARXPS). Analysis of the N 1s band indicates the existence of three bands that could be assigned to C-N sp(3), C-N sp(2) types of b onding and molecular nitrogen, respectively. Such an explanation is co nsistent with the analysis of C 1s band. The depth profiles of implant ed nitrogen, recovered by inversion of the angle-dependent XPS data, r evealed that ion-dose, ion-energy and angle between the ion beam and t he surface normal are relevant parameters to control the composition a nd the thickness of the produced films. (C) 1997 Elsevier Science Ltd.