P. Kichambare et al., PREPARATION AND FUNDAMENTAL PHYSICAL-PROPERTIES OF THE QUATERNARY CHALCOGENIDES SNBI4-XTE3-Z AND PBBI4-XTE3-YSE4-Z(YSE4), Solid state ionics, 101, 1997, pp. 125-129
The quaternary chalcogenides SnBi4-xTe3+ySe4-z and PbBi4-xTe3-ySe4-z h
ave been prepared and found to possess orthorhombic structure. The che
mical composition of materials is confirmed by EDX. SnBi4-xTe3+ySe4-z
and PbBi4-xTe3-ySe4-z exhibit a low resistivity 0.0055 ohm cm and 0.16
65 ohm cm at room temperature and carrier concentration 7.15 x 10(18)
and 1.97 x 10(16) cm(-3) respectively. The Hall measurements show n-ty
pe behaviour with mobility of carrier 87 and 2534 M-2/V, and band gap
by diffuse reflectance are found to be 4.37 eV and 3.98 eV for SnBi4-x
Te3+ySe4-z and PbBi4-xTe3-ySe4-z respectively.