We have synthesized Sb1-xBixTeI (where x = 0.1, 0.4 and 0.9.). The str
uctural variation, electrical resistivity, diffuse reflectance spectro
scopy and surface morphology of Sb1-xBixTeI have been studied. The com
pounds crystallize with the triclinic symmetry. The temperature depend
ence of electrical resistivity exhibits semiconducting behaviour. The
activation energy and band gap of pure SbTeI are found to be 0.37 and
0.73 eV, respectively.