DEFECT MODELING IN NONSTOICHIOMETRIC OXIDES

Citation
G. Boureau et al., DEFECT MODELING IN NONSTOICHIOMETRIC OXIDES, Solid state ionics, 101, 1997, pp. 397-401
Citations number
18
Journal title
ISSN journal
01672738
Volume
101
Year of publication
1997
Part
1
Pages
397 - 401
Database
ISI
SICI code
0167-2738(1997)101:<397:DMINO>2.0.ZU;2-N
Abstract
The mass action law formalism has been extensively used as an efficien t way to rationalize a large spectrum of properties of non-stoichiomet ric oxides. This approach is still extremely useful in spite of some s hortcomings. In fact most of the improvements proposed in the literatu re have lost the clarity of the initial model and convey an extremely heavy formalism. We show that an obvious improvement is to take into a ccount the electrostatic interactions, which allows to better understa nd not only thermodynamic properties but also transport properties.