GERMANIUM DIFFUSION IN LEAD-TELLURIDE CRYSTAL

Authors
YASHINA LV SHATALOVA TB BOBRUIKO VB BELYANSKY MP ZLOMANOV VP
Citation
Lv. Yashina et al., GERMANIUM DIFFUSION IN LEAD-TELLURIDE CRYSTAL, Solid state ionics, 101, 1997, pp. 533-538
Citations number
12
Journal title
Solid state ionics → ACNP
ISSN journal
01672738
Volume
101
Year of publication
1997
Part
1
Pages
533 - 538
Database
ISI
SICI code
0167-2738(1997)101:<533:GDILC>2.0.ZU;2-#
Abstract
Germanium diffusion in p-type PbTe (p = 8 x 10(17)-2.6 x 10(18) cm(-3) ) was investigated by sputtered neutrals mass-spectrometry (SNMS) and layer-by-layer X-ray analysis at temperatures T = 853-973 K. The probl em of optimization of annealing conditions for diffusion study was dis cussed. From the temperature dependence of the germanium diffusion coe fficient (D-Ge) activation energy was calculated (E-A = 1.4 +/- 0.1 eV ). It was found that D-Ge is proportional to hole concentration. The v acancy mechanism is likely predominant.