MONTE-CARLO SIMULATION OF MBE GROWTH OF GAAS ANALYSIS OF RHEED

We have performed Monte-Carlo simulations of the growth of GaAs by MBE . We included in our calculations the anisotropy of the migration, the formation of As-dimers and a partial desorption of the As. As an obse rvable we calculated the RHEED signal of the specularly reflected elec trons. The results have been compared with experimental data comprisin g both the damping of the oscillations and the recovery following a gr owth interrupt. The agreement between experiment and calculations is r ather good. Moreover we could identify the mechanisms underlying the f ast and the slow component of the recovery.