METHOD OF SURFACE-STATE INVESTIGATION AT LOW-TEMPERATURES

Authors
AROUTIOUNIAN VM MELICKSETIAN VA MARGARIAN HL KESOYAN AL
Citation
Vm. Aroutiounian et al., METHOD OF SURFACE-STATE INVESTIGATION AT LOW-TEMPERATURES, Surface review and letters, 4(5), 1997, pp. 1055-1058
Citations number
6
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
4
Issue
5
Year of publication
1997
Pages
1055 - 1058
Database
ISI
SICI code
0218-625X(1997)4:5<1055:MOSIAL>2.0.ZU;2-C
Abstract
The method of investigation of the surface potential influence on the processes taking place at the illuminated semiconductor-electrolyte in terface is suggested. The experimental data evidenced in particular th e formation and followed dissociation of surface exciton.