ON THE THEORY OF THE ADSORPTION OF A GAS ON A SEMICONDUCTOR

Citation
Vm. Aroutiounian et Gs. Aghababian, ON THE THEORY OF THE ADSORPTION OF A GAS ON A SEMICONDUCTOR, Surface review and letters, 4(5), 1997, pp. 1059-1061
Citations number
8
Journal title
ISSN journal
0218625X
Volume
4
Issue
5
Year of publication
1997
Pages
1059 - 1061
Database
ISI
SICI code
0218-625X(1997)4:5<1059:OTTOTA>2.0.ZU;2-N
Abstract
It is shown that a charging of the surface of a semiconductor by elect rons can lead to an effective increase of the desorption, a new term i n the kinetic equation and as a result the appearance of new regularit ies - both in the adsorption isotherm and in the kinetic equation. We point out the range of applications of the Langmuir and Henry theories as well as mentioned references where one observed root dependences o f the surface conduction on the pressure by experiment.