E. Wendler et al., ION MASS AND TEMPERATURE-DEPENDENCE OF DAMAGE PRODUCTION IN ION-IMPLANTED INP, Journal of applied physics, 82(12), 1997, pp. 5965-5975
Ion beam induced damaging and amorphization of crystalline InP is inve
stigated. 100 keV B+, 300 keV Si+, 200 keV Ar+ and 600 keV Se+ ions ar
e implanted into (100) InP at temperatures ranging from 80 K to 420 K.
The implanted layers are analyzed using Rutherford backscattering spe
ctrometry in channeling configuration, cross section transmission elec
tron microscopy and optical spectroscopy in the sub-gap frequency regi
on. The temperature dependence of damage production can be represented
assuming a thermally stimulated defect diffusion within the primary c
ollision cascades, resulting in a shrinkage of the remaining defect cl
usters. At a critical temperature T-infinity these clusters dissolve c
ompletely and only point defect complexes nucleate. Then, amorphizatio
n occurs only at very large ion fluences (approximate to 10(16) cm(-2)
) and the process seems to be influenced by the high amount of implant
ed ions. A defect band forms around the projected range of the implant
ed ions, which may act as a diffusion barrier for point defects. The r
ange of T, from approximate to 350 K for B+ and approximate to 420 K f
or Se+ ions corresponds to the annealing stage II of defects in InP, w
hich can be related to the mobility of phosphorous interstitials. This
indicates that phosphorous interstitials play an important role durin
g ion irradiation of InP. (C) 1997 American Institute of Physics.