ION MASS AND TEMPERATURE-DEPENDENCE OF DAMAGE PRODUCTION IN ION-IMPLANTED INP

Ion beam induced damaging and amorphization of crystalline InP is inve stigated. 100 keV B+, 300 keV Si+, 200 keV Ar+ and 600 keV Se+ ions ar e implanted into (100) InP at temperatures ranging from 80 K to 420 K. The implanted layers are analyzed using Rutherford backscattering spe ctrometry in channeling configuration, cross section transmission elec tron microscopy and optical spectroscopy in the sub-gap frequency regi on. The temperature dependence of damage production can be represented assuming a thermally stimulated defect diffusion within the primary c ollision cascades, resulting in a shrinkage of the remaining defect cl usters. At a critical temperature T-infinity these clusters dissolve c ompletely and only point defect complexes nucleate. Then, amorphizatio n occurs only at very large ion fluences (approximate to 10(16) cm(-2) ) and the process seems to be influenced by the high amount of implant ed ions. A defect band forms around the projected range of the implant ed ions, which may act as a diffusion barrier for point defects. The r ange of T, from approximate to 350 K for B+ and approximate to 420 K f or Se+ ions corresponds to the annealing stage II of defects in InP, w hich can be related to the mobility of phosphorous interstitials. This indicates that phosphorous interstitials play an important role durin g ion irradiation of InP. (C) 1997 American Institute of Physics.