MOBILITY SPECTRUM APPROACH IN THE ANALYSIS OF THE ELECTRICAL-CONDUCTION OF A GAAS LAYER GROWN BY MOLECULAR-BEAM EPITAXY

A new algorithm of the analysis of the electrical conduction in the la yers forming a semiconductor structure has been described. In the algo rithm, in contrast to earlier approaches, the mobility spectrum techni que has been applied to the sheet conductivity tenser. The standard ca rriers parameters have been estimated from the tensor components in th e high and low magnetic field limits. The proposed method has been ill ustrated by the analysis of results of the electrical conduction measu rements versus magnetic field performed up to 1.6 T at 77 K in a molec ular beam epitaxial (MBE) grown GaAs:Si structure. The sample was an M BE GaAs:Si layer grown on a buffer epilayer. As a result of the analys is, the mobility spectra and the standard parameters describing carrie rs in different layers have been found. (C) 1997 American Institute of Physics.