STRAIN EFFECTS ON INSB PHONONS IN BULK AND SUPERLATTICE LAYERS

Authors
SIAKAVELLAS M RAPTIS YS ANASTASSAKIS E LOCKWOOD DJ
Citation
M. Siakavellas et al., STRAIN EFFECTS ON INSB PHONONS IN BULK AND SUPERLATTICE LAYERS, Journal of applied physics, 82(12), 1997, pp. 6235-6239
Citations number
31
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
82
Issue
12
Year of publication
1997
Pages
6235 - 6239
Database
ISI
SICI code
0021-8979(1997)82:12<6235:SEOIPI>2.0.ZU;2-D
Abstract
We have studied the effect of uniaxial stress on the long-wavelength o ptical phonons of InSb at room temperature using Raman spectroscopy. F rom the observed frequency shifts and degeneracy splittings we obtain values for the phonon deformation potentials. The results are used to analyze previously reported Raman measurements of phonons in strained InSb/In1-xAlxSb superlattices. (C) 1997 American Institute of Physics.