EFFECT OF CAPTURE AND ESCAPE PHENOMENA IN MONTE-CARLO TECHNIQUE ON THE SIMULATION OF THE NONLINEAR CHARACTERISTICS IN HIGH-ELECTRON-MOBILITY TRANSISTORS

The transport properties of electrons in a heterostructure high electr on mobility transistor are analyzed by considering the capture and esc ape phenomena as scattering events in Monte Carlo simulation. Through the variation of the equivalent charge in time, the drain current of a n AlInAs/InGaAs/InP quantum-well device with planar doping is deduced for given drain and gate voltages. We studied the energy distribution of carriers in the device and we compared the results to those obtaine d by other quantum mechanical treatment and the classical treatment of the confinement, We demonstrated that by using our capture procedure for the quantum mechanical treatment, carriers have higher energy valu es than in the case of classical treatment and therefore the current v alues are different by an amount of 30% - 40%. (C) 1997 American Insti tute of Physics.