STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 81, PG 1905, 1997)/

YIP RYF AITOUALI A BENSAADA A DESJARDINS P BEAUDOIN M ISNARD L BREBNER JL CURRIE JF MASUT RA

Ryf. Yip et al., STRAIN AND RELAXATION EFFECTS IN INASP INP MULTIPLE-QUANTUM-WELL OPTICAL MODULATOR DEVICES GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY (VOL 81, PG 1905, 1997)/, Journal of applied physics, 82(12), 1997, pp. 6372-6372

1

Journal of applied physics → ACNP

00218979

82

12

1997

6372 - 6372

ISI

0021-8979(1997)82:12<6372:SAREII>2.0.ZU;2-V