HIGH-SURFACE-AREA SNO2 - A NOVEL SEMICONDUCTOR-OXIDE GAS SENSOR

Authors
Citation
Gj. Li et S. Kawi, HIGH-SURFACE-AREA SNO2 - A NOVEL SEMICONDUCTOR-OXIDE GAS SENSOR, Materials letters, 34(1-2), 1998, pp. 99-102
Citations number
17
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
34
Issue
1-2
Year of publication
1998
Pages
99 - 102
Database
ISI
SICI code
0167-577X(1998)34:1-2<99:HS-ANS>2.0.ZU;2-6
Abstract
High surface area SnO2 sensor materials were systematically synthesize d by a surfactant incorporating method. After calcination at 723 K, a high BET surface area of 156.8 m(2)/g was obtained. The sensing proper ties of the high surface area SnO2 material were studied using H-2 as the probing gas. It is found that a linear relationship exists between sensor surface area and its sensitivity to H-2. (C) 1998 Elsevier Sci ence B.V.