We study the magnetic properties of Fe thin films epitaxially grown on
GaAs (001) for a large range of substrate temperature. Magnetization
deficiency has been detected and studied. Its dependence with both thi
ckness and temperature clearly show the existence of a nearly half-mag
netized phase at the interface, covered by ''as-bulk'' Fe. In order to
inhibit this interdiffusion, we study several methods. Using previous
O-3 oxidation of GaAs, the Fe layer is fully magnetized even for depo
sition at 200 degrees C. (C) 1997 American Institute of Physics.